New Products

Space & Harsh Environment

ISL72026BSEH
May 2018
3.3V Radiation Tolerant CAN Transceiver with Listen Mode and Loopback

The ISL72026BSEH is a radiation tolerant 3.3V CAN transceiver that is compatible with the ISO11898-2 standard for applications calling for Controller Area Network (CAN) serial communication in satellites and aerospace communications and telemetry data processing in harsh industrial environments.  More

ISL72027BSEH
May 2018
3.3V Radiation Tolerant CAN Transceiver, with Listen Mode and Split Termination Output

The ISL72027BSEH is a radiation tolerant 3.3V CAN transceiver that is compatible with the ISO11898-2 standard for applications calling for Controller Area Network (CAN) serial communication in satellites and aerospace communications and telemetry data processing in harsh industrial environments.  More

ISL72028BSEH
May 2018
3.3V Radiation Tolerant CAN Transceiver, with Low-Power Shutdown, Split Termination Output

The ISL72028BSEH is a radiation tolerant 3.3V CAN transceiver that is compatible with the ISO11898-2 standard for applications calling for Controller Area Network (CAN) serial communication in satellites and aerospace communications, and telemetry data processing in harsh industrial environments.  More

ISL73051ASEH
February 2018
3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator

The ISL75051ASEH and ISL73051ASEH are radiation hardened low-voltage, high-current, single-output LDOs specified for up to 3.0A of continuous output current. These devices operate over an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V adjustable, based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device.  More

ISL75051ASEH
February 2018
3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator

The ISL75051ASEH and ISL73051ASEH are radiation hardened low-voltage, high-current, single-output LDOs specified for up to 3.0A of continuous output current. These devices operate over an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V adjustable, based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device.  More

ISL70040SEH
December 2017
Radiation Hardened Low Side GaN FET Driver

The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.  More

ISL73040SEH
December 2017
Radiation Hardened Low Side GaN FET Driver

The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.  More

ISL73023SEH
December 2017
100V, 60A Enhancement Mode GaN Power Transistor

The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) Low Dose Rate (LDR). Applications for these devices include commercial aerospace, medical, and nuclear power generation.  More

ISL73024SEH
December 2017
200V, 7.5A Enhancement Mode GaN Power Transistors

The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) low Dose Rate (LDR). Applications for these devices include commercial aerospace, medical, and nuclear power generation.  More

ISL70024SEH
October 2017
200V, 7.5A Enhancement Mode GaN Power Transistor

The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) low Dose Rate (LDR). Applications for these devices include commercial aerospace, medical, and nuclear power generation.  More

ISL70023SEH
October 2017
100V, 60A Enhancement Mode GaN Power Transistor

The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) Low Dose Rate (LDR). Applications for these devices include commercial aerospace, medical, and nuclear power generation.  More

ISL71218M
September 2017
Dual 36V Precision Single-Supply, Rail-to-Rail Output, Low-Power Operational Amplifier

The ISL71218M is a radiation tolerant dual, low-power precision amplifier optimized for single-supply applications. This op amp features a common-mode input voltage range extending to 0.5V below the V- rail, a rail-to-rail differential input voltage range, and rail-to-rail output voltage swing, which makes it ideal for single-supply applications where input operation at ground is important.  More

ISL73321SEH
September 2017
Radiation Hardened Quad Power Supply Sequencer

The ISL70321SEH and ISL73321SEH are radiation hardened and SEE mitigated power supply sequencers designed to drive Point-of-Load (POL) regulators with enable pins. Up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies for dense RF applications.   More

ISL70321SEH
August 2017
Radiation Hardened Quad Power Supply Sequencer

The ISL70321SEH and ISL73321SEH are radiation hardened and SEE mitigated power supply sequencers designed to drive Point-of-Load (POL) regulators with enable pins. Up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies for dense RF applications.   More

IS-1715AEH
July 2017
Radiation Hardened Complementary Switch FET Driver

The radiation hardened IS-1715ARH and IS-1715AEH are high speed, high current, complementary power FET drivers designed for use in synchronous rectification circuits. Soft switching transitions for the two output waveforms can be managed by setting the independently programmable delays. Alternatively, the delay pins can be configured for zero-voltage sensing to allow for precise switching control.  More