The price listed is the manufacturer's suggested retail price for quantities of 1K units. However, prices in today's market are fluid and may change without notice.
MSL = Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD = Standard Microcircuit Drawing
Description
The ISL6612 and ISL6613 are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multiphase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors.
The ISL6612 drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613 drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an over-voltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during startup. The overtemperature protection feature prevents failures resulting from excessive power dissipation by shutting off the outputs when its junction temperature exceeds 150°C (typically). The driver resets once its junction temperature returns to 108°C (typically).
These drivers also feature a three-state PWM input which, working together with Intersil's Multiphase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.
Key Features
Pin-to-pin Compatible with HIP6601 SOIC family for Better Performance and Extra Protection Features
Dual MOSFET Drives for Synchronous Rectified Bridge
Advanced Adaptive Zero Shoot-Through Protection
Body Diode Detection
Auto-zero of rDS(ON) Conduction Offset Effect
Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
36V Internal Bootstrap Schottky Diode
Bootstrap Capacitor Overcharging Prevention
Supports High Switching Frequency (up to 2MHz)
3A Sinking Current Capability
Fast Rise/Fall Times and Low Propagation Delays
Three-State PWM Input for Output Stage Shutdown
Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
Pre-POR Over-Voltage Protection
VCC Undervoltage Protection
Over Temperature Protection (OTP) with 42°C Hysteresis
Expandable Bottom Copper Pad for Enhanced Heat Sinking
Dual Flat No-Lead (DFN) Package
Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
