Device Information
 
 
ISL6594A Printer Friendly Version
 
Advanced Synchronous Buck MOSFET Driver with 3V PWM Interface and Advanced Protection Features
 
Datasheets,
Related Docs
& Simulations
DescriptionKey
Features
Parametric
Data
Related
Devices
 
 
Ordering Information
 iBuy direct from Intersil  iBuy direct - out of stock  Request samples
 Check distributor inventory Green/Pb(Lead free) Device  Available in RoHS/Pb-Free  
Part No. Design-In
Status
Temp. Package MSL Price
US $
PB Free
ISL6594ACBZ Active Comm 8 Ld SOIC 1 1.29 PB Free Out of stock Disti-Buy Sample
ISL6594ACBZ-T Active Comm 8 Ld SOIC T+R 1 1.35 PB Free Disti-Buy  
ISL6594ACRZ Active Comm 10 Ld DFN 2 1.35 PB Free Out of stock Disti-Buy Sample
ISL6594ACRZ-T Active Comm 10 Ld DFN T+R 2 1.41 PB Free Buy Direct Disti-Buy  
ISL6594ACB InActive Comm 8 Ld SOIC 1 N/A      
ISL6594ACB-T InActive Comm 8 Ld SOIC T+R 1 N/A      
ISL6594ACR InActive Comm 10 Ld DFN 1 N/A      
ISL6594ACR-T InActive Comm 10 Ld DFN T+R 1 N/A      
The price listed is the manufacturer's suggested retail price for quantities of 1K units. However, prices in today's market are fluid and may change without notice.
MSL = Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD = Standard Microcircuit Drawing
 
  Description

The ISL6594A and ISL6594B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with the ISL6592 Digital Multi-Phase Buck PWM controller and N-Channel MOSFETs form a complete core-voltage regulator solution for advanced microprocessors.

The ISL6594A drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6594B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.

An adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up.

These drivers also feature a three-state PWM input which, working together with Intersil's multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

 
  Key Features
 
  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 2MHz)
    • 3A Sinking Current Capability
    • Fast Rise/Fall Times and Low Propagation Delays
  • Three-State PWM Input for Output Stage Shutdown
  • Three-State PWM Input Hysteresis for Applications with Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat No-Lead (DFN) Package
    • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free Available (RoHS Compliant)
Related Documentation
 
Datasheet(s)   Datasheet(s):
 
Technical Brief(s)   Technical Brief(s):
 
 
  Parametric Data
VIN/Vpwm (max) (V)GND - 0.3V to 7V
VDRIVE (V)5 or 12
Output Per Driver IUGATE Source/Sink (A)1.25/2
Output Per Driver ILGATE Source/Sink (A) 2/3
Phase VPHASE (min) (V)GND - 0.3VDC GND - 8V (<400ns)
Phase VPHASE (max) (V)15VDC, 30V (<200ns)
No Load IS (max) (mA)2.5
IS (mA)8
 
 
Applications
 
  • Core Regulators for IntelŽ and AMDŽ Microprocessors
  • High Current DC/DC Converters
  • High Frequency and High Efficiency VRM and VRD
 
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