The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs, like our Rad Hard FS055, in high frequency applications.
The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the outputs into a three-state mode when the supply voltage drops below 10V for the HS-4423RH and 7.5V for the HS-4423BRH.
Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-99511. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp
Key Features
Electrically Screened to DESC SMD # 5962-99511
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
Total Dose (Max) 3 x 105 RAD(SI)
Latch-Up Immune
Low Dose Rate Immune
IPEAK >2A (Typ)
Matched Rise and Fall Times (CL = 4300pF) . . . 75ns (Max)
