• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
• Pb-Free Product Available (RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1Ω Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• CMOS Input Thresholds for Improved Noise Immunity
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
• Supply Undervoltage Protection
• 3Ω Driver Output Resistance
• QFN/DFN Package:
  • Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
  • Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile

The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

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