Device Information
 
 
HFA3096 Printer Friendly Version
 
Ultra High Frequency Transistor Arrays
 
Datasheets,
Related Docs
& Simulations
DescriptionKey
Features
Parametric
Data
Application
Diagrams
Related
Devices
 
 
Ordering Information
 iBuy direct from Intersil  iBuy direct - out of stock  Request samples
 Check distributor inventory Green/Pb(Lead free) Device  Available in RoHS/Pb-Free  
Part No. Design-In
Status
Temp. Package MSL Price
US $
PB Free
HFA3096B Active Mil 16 Ld SOIC 1 2.03  Buy Direct Disti-Buy Sample
HFA3096B96 Active Mil 16 Ld SOIC T+R 1 2.03   Disti-Buy  
HFA3096BZ Active Mil 16 Ld SOIC 3 2.03 PB Free Buy Direct Disti-Buy Sample
HFA3096BZ96 Active Mil 16 Ld SOIC T+R 3 2.03 PB Free Disti-Buy  
The price listed is the manufacturer's suggested retail price for quantities of 1K units. However, prices in today's market are fluid and may change without notice.
MSL = Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD = Standard Microcircuit Drawing
 
  Description

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.

 
  Key Features
 
  • NPN Transistor (fT) 8GHz
  • NPN Current Gain (hFE) 130
  • NPN Early Voltage (VA) 50V
  • PNP Transistor (fT) 5.5GHz
  • PNP Current Gain (hFE) 60
  • PNP Early Voltage (VA) 20V
  • Noise Figure (50Ω) at 1.0GHz 3.5dB
  • Collector to Collector Leakage <1pA
  • Complete Isolation Between Transistors
  • Pin Compatible with Industry Standard 3XXX Series Arrays
  • Pb-Free Plus Anneal Available (RoHS Compliant)
Related Documentation
 
Application Note(s)   Application Note(s):
 
Datasheet(s)   Datasheet(s):
 
SMD Datasheet(s)   SMD Datasheet(s):
 
Technical Homepage   Technical Homepage:
 
Design Model(s)   Design Model(s):
 
   Other:
 
  Parametric Data
NPN or PNPNPN/PNP
# of Devices/ Channels3/2
V(BR) CBO18/15
V(BR) CEO (V)12/15
V(BR) EBO (V)6/5
ICEO (nA)2/2
ICBO (nA)0.1/0.1
HFE70/35
NF (dB)3.5/3.5
FT (GHz)8/5.5
VOS (max) (mV)5
IOS (ľA)N/A
CEB (pF)0.5/0.5
CCB (pF)0.5/0.6
 
  Application Block Diagrams
 
 
 
Applications
 
  • VHF/UHF Amplifiers
  • VHF/UHF Mixers
  • IF Converters
  • Synchronous Detectors

 

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