- Electrically Screened to SMD 5962-99617
- QML Qualified per MIL-PRF-38535 Requirements
- Radiation Environment
- Gamma Dose: 300kRAD(Si) (Max)
- Latch-up Immune RSG DI Process
- Drives N-Channel FET Full Bridge Including High-Side Chop Capability
- Bootstrap Supply Max Voltage to 95VDC
- TTL Comparator Input Levels
- Drives 1000pF Load with Rise and Fall Times of 50ns
- User-Programmable Dead Time
- Charge-Pump and Bootstrap Maintain Upper Bias Supplies
- DIS (Disable) Pin Pulls Gates Low
- Operates From Single Supply: 12V to 18V
- Low Power Consumption
- Undervoltage Protection
The HS-4080ARH, HS-4080AEH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC. The device includes a TTL-level input comparator, which can be used to facilitate the “hysteresis” and PWM modes of operation. Its HEN (high enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. The HS-4080ARH, HS-4080AEH is well suited for use in distributed DC power supplies and DC/DC converters, since it can switch at high frequencies.
These devices can also drive medium voltage motors, and two HS-4080ARH, HS-4080AEHs can be used to drive high performance stepper motors, since the short minimum “on-time” can provide fine micro-stepping capability.
Short propagation delays maximize control loop crossover frequencies and dead-times, which can be adjusted to near zero to minimize distortion, resulting in precise control of the driven load.
Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Complete your design with radiation hardened MOSFETs from Intersil.
Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering.Detailed Electrical Specifications for these devices are contained in SMD 5962-99617.
- Full Bridge Power Supplies
- PWM Motion Control
|Class||V, Q, /PROTO||V||V, Q, /PROTO||V, Q, /PROTO|
|High Dose Rate (HDR) krad(Si)||300||300||300||300|
|SEL (MeV/mg/cm2)||SEL free||SEL free||SEL free||SEL free|
|Qualification Level||QML Class Q (military), QML Class V (space)||QML Class V (space)||QML Class Q (military), QML Class T (space lower level), QML Class V (space)||QML Class Q (military), QML Class T (space lower level), QML Class V (space)|
|AN9867: End of Life Derating: A Necessity or Over Kill|
End of Life Derating: A Necessity or Over Kill
13 Nov 2014
|13 Nov 2014||35 KB|
Radiation Hardened Full Bridge N-Channel FET Driver
27 May 2015
|27 May 2015||314 KB|
Standard Microcircuit Drawings
|SMD 5962-99617 (HS-4080AEH, HS-4080ARH)|
HS-4080AEH, HS-4080ARH electrically screened to Standard Microcircuit Drawing (SMD) 5962-99617.
|HS-4080ARH SEE Test Report|
Single Event Testing of the HS-4080ARH Full Bridge FET Driver
14 Nov 2014
|14 Nov 2014||897 KB|
|Intersil Commercial Lab Services|
Intersil Commercial Lab Services
18 Nov 2014
|18 Nov 2014||364 KB|