Rad Hard 40V Quad Precision Low Power Operational Amplifiers

Typical Diagram

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Key Features

    • Electrically Screened to DLA SMD# 5962-12228
    • Low Input Offset Voltage: ±110µV, Max.
    • Superb Offset Temperature Coefficient: 1µV/°C, Max.
    • Input Bias Current: ±5nA, Max.
    • Input Bias Current TC: ±5pA/°C, Max.
    • Low Current Consumption: 440µA
    • Voltage Noise: 8nV/√Hz
    • Wide Supply Range: 4.5V to 40V
    • Operating Temperature Range: -55°C to +125°C
    • Radiation Environment
      • SEL/SEB LETTH (VS = ±20V): 73.9 MeV•cm2/mg
      • Total Dose, High Dose Rate: 300krad(Si)
      • Total Dose, Low Dose Rate: 100krad(Si) ** Product capability established by initial characterization. The EH version is acceptance tested on a wafer by wafer basis to 50krad(Si) at low dose rate.


The ISL70417SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current and low temperature drift making them the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.

Applications for these amplifiers include precision active filters, medical and analytical instrumentation, precision power supply controls, and industrial controls.

The ISL70417SEH is offered in a 14 lead hermetic ceramic flatpack package. The device is offered in an industry standard pin configuration and operates over the extended temperature range from -55°C to +125°C.


    • Precision Instrumentation
    • Spectral Analysis Equipment
    • Active Filter Blocks
    • Thermocouples and RTD Reference Buffers
    • Data Acquisition
    • Power Supply Control

Design Tip

Are the Schottky clamp diodes required on the outputs when not driving MOSFETs?

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