*EL8102/3, EL8202/3, EL8302 and EL8402 Macromodel 
*Version 4, Nov. 2009 by Jian Wang
*Copyright 2009 by Intersil Corporation
*Refer to data sheet "LICENSE STATEMENT" Use of 
*this model indicates your acceptance with the
*terms and provisions in the License Statement.
*The AC response, Transient Response, SR, Open loop gain, voltage noise are modeled.
*Updated information, add Current noise, Input Common mode Capacitance 0.8pf. 
*Input differential mode capacitance 1.1pf.
* connections:        +input
*                       |  -input
*                       |    | +Vsupply
*                       |    |    | -Vsupply
*                       |    |    |    |  output
*                       |    |    |    |    |
.subckt EL8102          3    2    7    4    6
R_R17         4 19  100k  
R_R3         4 12  1000  
V_V6         18 VV3 0.7Vdc
R_R8         18 0   1G
R_R19         0 21  1G  
G_G8         7 6 7 VV5 -0.01
R_R25         0 NI1  0.0003  
R_R4         4 13  1000  
M_M1         12 8 9 9 pmosisil  
+ L=50u  
+ W=50u         
D_DN1         102 101 DN 
C_C2         4 VV3  6p 
I_I2         7 10 DC 1mA  
M_M2         13 2 11 11 pmosisil  
+ L=50u  
+ W=50u         
C_Cin2         2 0  0.8p  
R_R5         4 VV3  5Meg  
R_R16         6 7  100  
D_D3         4 17 DX 
C_C1         VV3 7  6p  
R_R21         0 101  120k  
G_G9         21 4 6 VV5 0.00025
R_R14         VV5 20  100k  
D_D7         7 21 DX 
V_V5         VV3 17 0.7Vdc
R_R7         17  0  1G
R_R1         9 10  10  
G_G10         22 4 VV5 6 0.00025
R_R11         VV4 7  100k  
E_E1         16 4 7 4 0.5
R_R15         4 6  100  
R_R23         0 NI2  0.0002  
R_R20         22 0  1G  
R_R10         4 VV4  100k  
R_R2         10 11  10  
R_R6         VV3 7  5Meg  
D_DN2         104 103 DN 
G_G4         7 VV4 VV3 16 0.00001
I_Ib1         0 3 DC 5.95uAdc  
G_G6         7 VV5 VV4 16 0.00001
D_D8         7 22 DX 
I_Ib2         0 2 DC 6.05uAdc  
L_L1         20 7  80uH  
R_R22         0 103  120k  
G_G3         4 VV4 VV3 16 0.00001
G_G7         6 4 VV5 4 -0.01
G_Gn1         3 0 NI1 0 1
E_EN         8 3 101 103 1
G_G5         4 VV5 VV4 16 0.00001
D_D5         4 21 DY 
I_I1         7 4 DC 4mA  
G_G1         4 VV3 13 12 0.004
L_L2         4 19  80uH  
R_R13         19 VV5  100k  
D_D6         4 22 DY 
R_R26         0 NI1  0.0003  
V_V16         104 0 1Vdc
G_G2         7 VV3 13 12 0.004
G_Gn2         2 0 NI2 0 1
R_R18         20 7  100k  
V_V15         102 0 1Vdc
C_C4         VV4 7  0.005p  
C_C3         4 VV4  0.005p  
R_R24         0 NI2  0.0002  
D_D4         18 7 DX 
C_Cin1         8 0  0.8p  
C_Cdiff        8 2  1.1p
.model pmosisil pmos (kp=4e-3 vto=10m)
.MODEL DY D(IS=1E-25 BV=50 Rs=1)
.MODEL DX D(IS=1E-15 Rs=0.1)
.model DN D(KF=6.4E-16 AF=1)
.ends EL8102