*EL8100, EL8101, EL8200, EL8201 and EL8401 Macromodel 
*Version 4, Nov. 2009 by Jian Wang
*Copyright 2009 by Intersil Corporation
*Refer to data sheet "LICENSE STATEMENT" Use of 
*this model indicates your acceptance with the
*terms and provisions in the License Statement.
*The AC response for this model is based on Vs=5V and RL=1K
*SR,open loop gain, voltage noise and Trans Response are modeled.
*8/3/2009 Updated information, add Current noise, Input Common mode Capacitance 0.9pf.
*Input differential capacitance 0.6pf.
* connections:        +input
*                       |  -input
*                       |    | +Vsupply
*                       |    |    | -Vsupply
*                       |    |    |    |  output
*                       |    |    |    |    |
.subckt EL8100          3    2    7    4    6
G_Gn1         3 0 NI1 0 1
R_R3         4 12  1000  
V_V6         18 VV3 0.8Vdc
R_R18        18 0 1G
R_R35         0 21  1G  
G_Gn2         2 0 NI2 0 1
G_G12         7 6 7 VV5 -0.006666667
R_R4         4 13  1000  
M_M1         12 8 9 9 pmosisil  
+ L=50u  
+ W=50u         
R_R26         0 NI1  0.0001  
D_DN1         102 101 DN 
C_C2         4 VV3  85p  
I_I2         7 10 DC 1mA  
C_C3         VV5 7  0.0001p  
M_M2         13 2 11 11 pmosisil  
+ L=50u  
+ W=50u         
R_R24         0 NI2  0.0001 
C_Cin2         2 0  0.9p  
C_Cdiff         8 2  0.6p  
R_R7         4 VV3  500k  
R_R16         6 7  150  
D_D3         4 17 DX 
C_C1         VV3 7  85p  
R_R21         0 101  80k  
G_G9         21 4 6 VV5 0.00025
R_R14         VV5 7  100k  
D_D7         7 21 DX 
V_V5         VV3 17 0.8Vdc
R_R17        17  0  1G
R_R1         9 10  10  
G_G10         22 4 VV5 6 0.00025
R_R11         VV4 7  100k  
E_E1         16 4 7 4 0.5
R_R15         4 6  150  
R_R36         22 0  1G  
R_R10         4 VV4  100k  
R_R2         10 11  10  
R_R8         VV3 7  500k  
D_DN2         104 103 DN 
G_G6         7 VV4 VV3 16 0.00001
G_G8         7 VV5 VV4 16 0.00001
I_Ib1         0 3 DC 1.4uAdc  
D_D8         7 22 DX 
I_Ib2         0 2 DC 1.6uAdc  
R_R22         0 103  80k  
G_G5         4 VV4 VV3 16 0.00001
R_R25         0 NI1  0.0001  
G_G11         6 4 VV5 4 -0.006666667
C_C4         4 VV5  0.0001p  
G_G7         4 VV5 VV4 16 0.00001
E_EN         8 3 101 103 1
D_D5         4 21 DY 
I_I1         7 4 DC 0.6mA  
G_G3         4 VV3 13 12 0.025
R_R13         4 VV5  100k  
D_D6         4 22 DY 
V_V16         104 0 1Vdc
R_R23         0 NI2  0.0001  
G_G4         7 VV3 13 12 0.025
V_V15         102 0 1Vdc
C_C31         VV4 7  0.008p  
C_C32         4 VV4  0.008p  
D_D4         18 7 DX 
C_Cin1         8 0  0.9p    
.model pmosisil pmos (kp=6.4e-3 vto=10m)
.MODEL DY D(IS=1E-25 BV=50 Rs=1)
.MODEL DX D(IS=1E-15 Rs=0.1)
.model DN D(KF=8E-16 AF=1) 
.ends EL8100