ISL80111
Ultra Low Dropout 1A Low Input Voltage NMOS LDOs

Key Features

• Ultra Low Dropout: 75mV at 3A, (typ)
• Excellent V_IN PSRR: 70dB at 1kHz (typ)
• ±1.6% Guaranteed V_OUT Accuracy for -40°C < T_J < +125°C
• Very Fast Load Transient Response
• Extensive Protection and Reporting Features
• V_IN Range: 1V to 3.6V, V_OUT Range: 0.8V to 3.3V
• Small 10 Ld 3x3 DFN Package

Description

The ISL80111, ISL80112, and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance, size and power consumption in size constrained designs for data communication, computing, storage and medical applications. These LDOs are specified for 1A, 2A and 3A of output current and are optimized for low voltage conversions. Operating with a V_IN of 1V to 3.6V and with a legacy 3.3V to 5V on the BIAS, the V_OUT is adjustable from 0.8V to 3.3V. With a V_IN PSRR greater than 40dB at 100kHz makes these LDOs an ideal choice in noise sensitive applications. The guaranteed ±1.6% V_OUT accuracy overall conditions lends these parts to suppling an accurate voltage to the latest low voltage digital ICs.

An enable input allows the part to be placed into a low quiescent current shutdown mode. A submicron CMOS process is utilized for this product family to deliver
best-in-class analog performance and overall value for applications in need of input voltage conversions typically below 2.5V. It also has the superior load transient regulation unique to a NMOS power stage. These LDOs consume significantly lower quiescent current as a function of load compared to bipolar LDOs.

Applications

• Noise-sensitive Instrumentation and Medical Systems
• Data Acquisition and Data Communication Systems
• Storage, Telecommunications and Server Equipment
• Low Voltage DSP, FPGA and ASIC Core Power Supplies
• Post-regulation of Switched Mode Power Supplies