Datasheet

IS-1845ASEH
Single Event Radiation Hardened High Speed, Current Mode PWM

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Typical Diagram

Key Features

Electrically Screened to DSCC SMD # 5962-01509
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment

High Dose Rate: 300 krad(SI) (Max)
Low Dose Rate: 50 krad(SI) (Max)
SEL Immune: Dielectrically Isolated
SEU Immune: 35MeV/mg/cm²
SEU Cross-Section at 89MeV/mg/cm²:
5 x 10^-6cm²

Low Start-up Current: 100µA (Typ)
Fast Propagation Delay: 80ns (Typ)
Supply Voltage Range: 12V to 20V
High Output Drive: 1A (Peak, Typ)
Undervoltage Lockout: 8.8V Start (Typ), 8.2V Stop (Typ)

Description

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier.

Constructed with Intersil’s Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are guaranteed and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate.

Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509. A “hot-link” is also provided on our website for downloading the SMD.