HCS32MS
CMOS Quad 2-Input OR Gate

Key Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200k RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm²/mg
• Single Event Upset (SEU) Immunity < 2 x 10^-9 Errors/Bit-Day (Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55°C to +125°C
• Significant Power Reduction Compared to LSTTL ICs
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200k RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm²/mg
• Single Event Upset (SEU) Immunity < 2 x 10^-9 Errors/Bit-Day (Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55°C to +125°C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• V_IL = 30% of V_CC Max
• V_IH = 70% of V_CC Min
• Input Current Levels I_i ≤ 5µA @ VOL, VOH

Description

The Intersil HCS32MS is a Radiation Hardened Quad 2-Input OR Gate. A low on both inputs forces the output to a low state.

The HCS32MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS32MS is supplied in a 14 Ld Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).