ACS03MS
CMOS Quad 2-Input NAND Gate with Open Drain

Key Features

• Devices QML Qualified in Accordance with MIL-PRF-38535
• Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil's QM Plan
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose >300K RAD (Si)
• Single Event Upset (SEU) Immunity: <1 x 10^-10 Errors/Bit/Day (Typ)
• SEU LET Threshold >100 MEV-cm²/mg
• Dose Rate Upset >10¹¹ RAD (Si)/s, 20ns Pulse
• Dose Rate Survivability >10¹² RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range -55^oC to +125^oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range 4.5V to 5.5V
• Input Logic Levels
• VIL = 30% of VCC Max
• VIH = 70% of VCC Min
• Input Current ≤ 1µA at VOL, VOH
• Fast Propagation Delay 15ns (Max), 10ns (Typ)

Description

The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage.

The ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic Family.

The ACS03MS is supplied in a 14 lead Ceramic Flatpack (K suffix) or a Ceramic Dual-In-Line Package (D suffix).