HS-6664RH
8k x 8 CMOS PROM
Key Features
- Electrically Screened to SMD # 5962-95626
- QML Qualified per MIL-PRF-38535 Requirements
- 1.2 Micron Radiation Hardened Bulk CMOS
- Total Dose 300 krad(Si) (Max)
- Transient Output Upset >5 x 108 rad(Si)/s
- LET >100 MEV-cm2/mg
- Fast Access Time 35ns (Typ)
- Single 5V Power Supply
- Single Pulse 10V Field Programmable
- Synchronous Operation
- On-Chip Address Latches
- Three-State Outputs
- NiCr Fuses
- Low Standby Current <500µA (Pre-Rad)
- Low Operating Current <15mA/MHz
- Military Temperature Range -55oC to 125oC
Description
The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation.
On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control (G) simplifies system interfacing by allowing output data bus control in addition to the chip enable control (E). All bits are manufactured storing a logical "0" and can be selectively programmed for a logical "1" at any bit location.
Applications for the HS-6664RH CMOS PROM include low power microprocessor based instrumentation and communications systems, remote data acquisition and processing systems, and processor control storage.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-95626. A "hot-link" is provided on our homepage for downloading.
www.intersil.com/spacedefense/space.htm
