HCS11MS
CMOS Triple 3-Input AND Gate

Key Features

• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K or 1 Mega-RAD(Si)
• Dose Rate Upset >10¹⁰ RAD(Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity < 2 x 10^-9 Errors/Gate Day (Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55^oC to +125^oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• VIL = 30% of VCC Max
• VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS11MS is a Radiation Hardened Triple 3- Input AND Gate. A high on all inputs forces the output to a High state.

The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).