HS-6254RH
Ultra High Frequency NPN-PNP Transistor Array
Typical Diagram
Key Features
- Electrically Screened to SMD # 5962-97641
- QML Qualified per MIL-PRF-38535 Requirements
- Radiation Environment
- Gamma Dose 3 x 105RAD(Si)
- SEL Immune Bonded Wafer Dielectric Isolation
- Gain Bandwidth Product (FT) 8GHz (Typ)
- Current Gain (hFE) 70 (Typ)
- Early Voltage (VA) 50V (Typ)
- Noise Figure (50Ω) at 1GHz 3.5dB (Typ)
- Collector-to-Collector Leakage <1pA (Typ)
Description
The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.
The high FT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the five transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-97641. A "hot-link" is provided on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Applications
- High Frequency Amplifiers and Mixers
- Refer to Application Note 9315
- High Frequency Converters
- Synchronous Detectors
