ISL21009B25EP
High Voltage Input Precision, Low Noise FGA™ Voltage References
Key Features
- Specifications per DSCC VID V62/08629
- Full Mil-Temp Electrical Performance from -55°C to +125°C
- Controlled Baseline with One Wafer Fabrication Site and One Assembly/Test Site
- Full Homogeneous Lot Processing in Wafer Fab
- No Combination of Wafer Fabrication Lots in Assembly
- Full Traceability Through Assembly and Test by Date/Trace Code Assignment
- Enhanced Process Change Notification
- Enhanced Obsolescence Management
- Eliminates Need for Up-Screening a COTS Component
- Output Voltages 2.500V, 4.096V, 5.000V
- Initial Accuracy ±0.5mV, ±1.0mV
- Input Voltage Range 3.5V to 16.5V
- Output Voltage Noise 4.5µVP-P (0.1Hz to 10Hz)
- Supply Current 180µA (Max)
- Temperature Coefficient 3ppm/°C, 5ppm/°C
- Output Current Capability Up to ±7.0mA
- Operating Temperature Range -55°C to +125°C
- Package 8 Ld SOIC
Description
The ISL21009MEP FGA™ voltage references are extremely low power, high precision, and low noise voltage references fabricated on Intersils proprietary Floating Gate Analog technology. The ISL21009MEP features very low noise (4.5µVP-P for 0.1Hz to 10Hz), low operating current (180µA, Max), and 3ppm/°C of temperature drift. In addition, the ISL21009 family features guaranteed initial accuracy as low as ±0.5mV.
This combination of high initial accuracy, low power and low output noise performance of the ISL21009MEP enables versatile high performance control and data acquisition applications with low power consumption.
The specifications for an Enhanced Product (EP) device are defined in a Vendor Item Drawing (VID), which is controlled by the Defense Supply Center in Columbus (DSCC). Hot-links to the applicable VID and other supporting application information are provided on our website.
Applications
- Defense/Commercial Avionics
- Radar/Sonar Systems
- Signal Processing Applications
