Applications

Datasheet

CA3127
High Frequency NPN Transistor Array

Typical Diagram

enlarge +typical diagram

Key Features

    • Gain Bandwidth Product (fT) >1GHz
    • Power Gain 30dB (Typ) at 100MHz
    • Noise Figure 3.5dB (Typ) at 100MHz
    • Five Independent Transistors on a Common Substrate
    • Pb-Free Plus Anneal Available (RoHS Compliant)

Description

The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

Applications

    • VHF Amplifiers
    • Multifunction Combinations - RF/Mixer/Oscillator
    • Sense Amplifiers
    • Synchronous Detectors
    • VHF Mixers
    • IF Converter
    • IF Amplifiers
    • Synthesizers
    • Cascade Amplifiers

Alternatives

Design Tip

Are the Schottky clamp diodes required on the outputs when not driving MOSFETs?

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