Datasheet

X28HC64
64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM

Overview
Parametrics
Documents
Packaging and Environmental
Resources
Order

Typical Diagram

enlarge +

Key Features

70ns access time
Simple byte and page write

Single 5V supply
No external high voltages or VPP control circuits
Self-timed
No erase before write
No complex programming algorithms
No overerase problem

Low power CMOS

40mA active current max.

200µA standby current max.
Fast write cycle times

64-byte page write operation
Byte or page write cycle: 2ms typical
Complete memory rewrite: 0.25 sec. typical
Effective byte write cycle time: 32µs typical

Software data protection
End of write detection

DATA polling
Toggle bit

High reliability

Endurance: 100000 cycles
Data retention: 100 years

JEDEC approved byte-wide pin out
Pb-free available (RoHS compliant)

Description

The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs.

The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features DATA Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil's hardware write protect capability.

Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.