X28C010
5V, Byte Alterable EEPROM

Key Features

• Access time: 120ns
• Simple byte and page write
• Single 5V supply
• No external high voltages or V_PP control circuits
• Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
• Low power CMOS
• Active: 50mA
• Standby: 500µA
• Software data protection
• Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write™ cell
• Endurance: 100,000 write cycles
• Data retention: 100 years
• Early end of write detection
• DATA polling
• Toggle bit polling
• X28HT010 is fuly functional @ +175°C

Description

The Intersil X28C010/X28HT010 is a 128k x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for byte-wide memories, compatible with industry standard EEPROMs.

The X28C010/X28HT010 supports a 256-byte page write operation, effectively providing a 19µs/byte write cycle and enabling the entire memory to be typically written in less than 2.5 seconds. The X28C010/X28HT010 also features DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle. In addition, the X28C010/X28HT010 supports Software Data Protection option.

Intersil EEPROMs are designed and tested for applications requiring extended endurance. Data retention is specified to be greater than 100 years.