ISL6209
High Voltage Synchronous Rectified Buck MOSFET Driver with Programmable Deadtime

Key Features

• Drives Two N-Channel MOSFETs
• Shoot-Through Protection
• Active Gate Threshold Monitoring
• Programmable Dead-Time
• 30V Operation Voltage
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
• Fast Output Rise Time
• Propagation Delay 8ns
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
• QFN Package:
• Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
• Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile
• Pb-Free Available as an Option

Description

The ISL6209 is a high frequency, dual MOSFET driver, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology in mobile computing applications. This driver, combined with an Intersil Multiphase Buck PWM controller, such as ISL6216, ISL6244, and ISL6247, forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors.

The ISL6209 features 4A typical sink current for the lower gate driver. The 4A typical sink current is capable of holding the lower MOSFET gate during the PHASE node rising edge to prevent the shoot-through power loss caused by the high dv/dt of the PHASE node. The operation voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies.

The ISL6209 also features a three-state PWM input that, working together with most of Intersil multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. This feature eliminates the Schottky diode, that is usually seen in a microprocessor power system for protecting the microprocessor, from reversed-output-voltage damage.

The ISL6209 has the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 8ns propagation delay and less than a 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Programmable dead-time with gate threshold monitoring is integrated to prevent both MOSFETs from conducting simultaneously.

Applications

• Core Voltage Supplies for Intel and AMD® Mobile Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Output Voltage DC-DC Converters
• High Input Voltage DC-DC Converter