HIP2060
60V, 10A Half Bridge Power MOSFET Array
Typical Diagram
Key Features
- Two 10A Power MOS N-Channel Transistors
- Output Voltage to 60V
- rDS(ON) 0.135Ω Max Per Transistor at VGS = 15V
- rDS(ON) 0.15Ω Max Per Transistor at VGS = 10V
- Pulsed Current 25A Each Transistor
- Avalanche Energy 100mJ Each Transistor
- Grounded Tab Eliminates Heat Sink Isolation
Description
The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.
The HIP2060 is designed to integrate two power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Uninterruptable Power Supplies, Switch Mode Power Supplies, Voice Coil Motors, and Class D Power Amplifier.
