Applications

Datasheet

HFA3102
Dual Long-Tailed Pair Transistor Array

Typical Diagram

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Key Features

    • High Gain-Bandwidth Product (fT) 10GHz
    • High Power Gain-Bandwidth Product 5GHz
    • High Current Gain (hFE) 70
    • Noise Figure (Transistor) 3.5dB
    • Low Collector Leakage Current <0.01nA
    • Excellent hFE and VBE Matching
    • Pin-to-Pin to UPA102G
    • Pb-Free Plus Anneal Available (RoHS Compliant)

Description

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.

Applications

    • Single Balanced Mixers
    • Wide Band Amplification Stages
    • Differential Amplifiers
    • Multipliers
    • Automatic Gain Control Circuits
    • Frequency Doublers, Tripplers
    • Oscillators
    • Constant Current Sources
    • Wireless Communication Systems
    • Radio and Satellite Communications
    • Fiber Optic Signal Processing
    • High Performance Instrumentation

Alternatives

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