News & Events
Intersil’s Latest MOSFET Drivers Deliver Gate Drive Voltage Flexibility

-- Offer optimization between MOSFET conduction and switching losses at any frequency~-- High switching frequency reduces board area, profile and weight

PALM BAY, FL, January 6, 2000 -- Intersil Corporation today introduced its new family of high-frequency, dual n-channel, power MOSFET drivers. The HIP6601 and HIP6603 MOSFET drivers provide flexible gate drive levels allowing controlled conduction and switching losses in a synchronous-rectified buck converter topology. The devices optimize efficiency and reduce component count in high-switching frequency, point-of-load dc/dc converters and are suited for multi-phase power conversion.

The HIP6601 drives the lower gate in a synchronous-rectifier bridge as high as 12 Volts (V), while the upper gate can be independently driven over a range of 5V to 12V. The HIP6603 drives both upper and lower gates over a range of 5V to 12V. At any given switching frequency, designers choose the gate drive voltage most suitable for achieving an optimal trade-off between MOSFET conduction and switching loss.

"Intersil's MOSFET drivers deliver the versatility designers require in tailoring their power supply application," said Steve Rivet, Director of Intersil's Desktop/Server Power Management Products Group. "The devices reduce design implementation complexity and improve the performance of fast-switching, embedded or Voltage Regulator Module (VRM)-style, buck dc/dc converters with output power of five Watts (W) to 200W."

The HIP6601 and HIP6603 are companion gate drivers to Intersil's newly announced HIP6300 series multiphase buck Pulse-Width Modulation (PWM) controllers. The multiphase power topology is ideal for high-power dc/dc converters and results in smaller and lower-cost transistors and fewer input and output capacitors. By improving overall power supply efficiency, the devices work equally well in applications requiring single-phase PWM control. Intersil's 30V N-channel UltraFETs„· complete the power train by offering an optimal combination of low conduction and switching losses.

The HIP6601 and HIP6603 drivers employ a unique adaptive shoot-through protection scheme that prevents simultaneous conduction of the switching and synchronous MOSFETs. Additionally, the devices offer an internal bootstrap diode that lowers switching loss, a tri-state input for bridge shutdown, and supply under voltage protection. The output drivers in the HIP6601 and HIP6603 have the capability to efficiently switch power MOSFETs at frequencies up to two megahertz and can drive 3,000picoFarrads (pF) loads within 20 nanoseconds.

Packaging, Pricing and Availability
The HIP6601 and HIP6603 are available in an eight-lead SOIC package. They are priced at $1.72 in 1,000 piece quantities. The devices are also available in a lower profile eight-lead TSSOP package upon request. For more information on the HIP6601 and HIP6603 -- including complete data sheets -- visit Intersil's homepage at http://www.intersil.com, or call 1-888-INTERSIL ex. 7964.

About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, wireless communications and power technologies to develop advanced integrated circuits and power semiconductors for high-growth segments of the communications, power and space/defense markets. Intersil Corporation employs 5,800 worldwide and utilizes the rich intellectual property of more than 1,400 patents. The company's web site is located at http://www.intersil.com.