News & Events
Intersil’s Latest Automotive MOSFETs Target Applications Requiring Full Device Capability at Low Gate Voltages

— New 60- and 100-volt MOSFET families include 24 discrete devices
— UltraFETTM Technology offers superior performance at higher breakdown voltages

PALM BAY, FL, September 9, 1999 — Intersil Corp. today added to its portfolio of advanced logic level MOSFETs for the automotive market, unveiling its new 60- and 100-volt Logic Level N-channel UltraFET MOSFET families. Together, the 60V and 100V families account for 24 discrete devices. Manufactured in Intersil’s state-of-the-art eight-inch discrete power wafer fab in Mountaintop, Pennsylvania, UltraFET is the company’s latest MOSFET technology, a planar process with high channel density.

The 60V (HUF764xx) family and 100V (HUF766xx) family of logic level devices are the latest additions to Intersil’s automotive MOSFET family targeting applications that require full device capability at low gate drive voltages. The 60V family includes 18 discrete devices while the 100V family features six devices. With a threshold between 1-2V, the devices are fully on with 5V on the gate. This low threshold design allows the MOSFETs to be driven directly by a signal from the microprocessor output, enabling applications in the 5V regulated supply voltage control circuit environment and low battery and cold crank conditions.

Intersil’s advanced UltraFET process technology achieves the lowest possible on-resistance per silicon area, and other capabilities resulting in unparalleled device performance. The process also enables all the 60V and 100V devices to withstand high peak currents and energy in the avalanche mode that is essential when switching inductive loads. Designed for use in applications where efficiency, ruggedness and high quality are crucial, the UltraFET process technology demonstrates itself well in automotive applications requiring high power such as standard and direct injection, anti-lock braking systems (ABS), high intensity discharge headlight systems (HID) and electric motor control.

The high channel density of the UltraFET process enables rds(on) performance as low as 9.5 milliohm in a TO-220 and D2Pak (TO-263) and 27 milliohm in a D-Pak (TO-252) at a BVdss of 60V, and rds(on) performance as low as 15 milliohm in TO-220 and TO-263 and 53 milliohm in TO-252 at a breakdown voltage of 100V.

All Intersil UltraFET devices are fully compliant with the latest AEC Q101 specification, including the recently added preconditioning with forced moisture penetration. Intersil’s Power Discrete facilities are also QS9000 certified.

About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, power and radiation-hardening technologies to develop advanced integrated circuits and discrete semiconductors for high-growth segments of the communications, power and space/defense markets. Intersil Corporation employs 5,800 worldwide and utilizes the rich intellectual property heritage from Harris, GE Solid State and RCA. The company’s worldwide web site is located at http://www.intersil.com.

This press release contains forward-looking statements made in reliance upon the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements reflect management's current assumptions and estimates of future performance and economic conditions. Specific risks include worldwide demand and product pricing for integrated circuits, and reductions in the U.S. and worldwide defense and space budgets. In addition, Intersil cautions investors that any forward-looking statements are subject to risks and uncertainties that may cause actual results and future trends and events to differ materially from those matters expressed in or implied by such forward-looking statements.