News & Events
Intersil’s Latest 60-Volt P-Channel Radiation Hardened MOSFET Delivers Single Effect Effects Protection in Satellite Applications
Provides lowest rDS(ON) 60-Volt P-Channel available
- Delivers new voltage ranges and Single Effect Effects capability
PALM BAY, FL, October 29, 1999 — Intersil Corp. announced today the latest addition to its family of next-generation radiation hardened (Rad Hard) MOSFETS that protect against Single Effect Effects (SEE) in outer space. The new 60-Volt (V) P-channel MOSFET delivers power conditioning and control in satellite applications, and at typical 16miliohms (mohm), offers the lowest rDS(ON) in the industry.
PALM BAY, FL, October 29, 1999 Intersil Corp. announced today the latest addition to its family of next-generation radiation hardened (Rad Hard) MOSFETS that protect against Single Effect Effects (SEE) in outer space. The new 60-Volt (V) P-channel MOSFET delivers power conditioning and control in satellite applications, and at typical 16miliohms (mohm), offers the lowest rDS(ON) in the industry.
Intersils FST9055 P-channel, 60V, size five, Rad Hard MOSFET has been designed to act as a switch to either control or supply power to an entire system or to a single object such as a solenoid or motor. Delivering an rDS(ON) of 16mohm, the devices reduces heat sink requirements and improves system loses. The result is less weight, cost and size for the entire system.
"The entire Rad Hard family includes a range of voltages that results in a greater number of breakdown voltage options for the designer," said Jerry Kim product manager at Intersil. "Many satellite bus systems designers utilize 500V devices. Intersil provides designers with the opportunity to employ a range of lower voltage FETs that dramatically reduce the rDS(ON) of the FET switch. In this case, Intersils FST9055 represents a 60V alternative. The direct result is a reduction in system loss leading to lower system costs or higher performance and efficiency."
The MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical double-diffused metal-oxide semiconductor (DMOS) structure. It is the only industry MOSFET with guaranteed SEE capability with safe operating area (SOA) curves. The device is suited for applications exposed to radiation environments, such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power.
Pricing and Availability
Intersils FST9055 is immediately available in a TO254 package, part number FSTJ9055 and an SMD 2 package, part number FSTYC9055. For more information, visit Intersils Web site or contact Intersil at 1-888-INTERSIL.
About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, power and radiation-hardening technologies to develop advanced integrated circuits and discrete semiconductors for high-growth segments of the communications, power and space/defense markets. Intersil Corporation employs 5,800 worldwide and utilizes the rich intellectual property heritage from Harris, GE Solid State and RCA. The companys Web site is located at http://www.intersil.com.
This press release contains forward-looking statements made in reliance upon the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements reflect management's current assumptions and estimates of future performance and economic conditions. Specific risks include worldwide demand and product pricing for integrated circuits, and reductions in the U.S. and worldwide defense and space budgets. In addition, Intersil cautions investors that any forward-looking statements are subject to risks and uncertainties that may cause actual results and future trends and events to differ materially from those matters expressed in or implied by such forward-looking statements.
