News & Events
Intersil’s Family of Radiation Hardened Inverting and Non-Inverting MOSFET Drivers Powers Aerospace Market
Converts transistortransistor logic level signals to high current outputs
- Radiation Hardened version of the industry standard 4423 and 4424 dual power MOSFET drivers
PALM BAY, FL, November XXXX, 1999 — Intersil Corporation announced today its radiation hardened (Rad Hard) inverting and non-inverting, dual, monolithic, high-speed MOSFET drivers. Designed to convert transistor – transistor logic (TTL) level signals into high current outputs at levels up to 18 volts (V), the devices represent Rad Hard versions of standard 4423RH and 4424RH MOSFET drivers. The devices have been designed to provide highly reliable performance in harsh radiation environments.
PALM BAY, FL, November XXXX, 1999 Intersil Corporation announced today its radiation hardened (Rad Hard) inverting and non-inverting, dual, monolithic, high-speed MOSFET drivers. Designed to convert transistor transistor logic (TTL) level signals into high current outputs at levels up to 18 volts (V), the devices represent Rad Hard versions of standard 4423RH and 4424RH MOSFET drivers. The devices have been designed to provide highly reliable performance in harsh radiation environments.
Intersils HS-4424RH/BRH and HS-4423RH/BRH represent non-inverting and inverting drivers respectively. The devices are tested and guaranteed to provide the performance of 4424RH and 4423RH MOSFET drivers to 300K Rad radiation levels. Intersils dielectrically isolated Rad Hard Silicon Gate (RSG) BICMOS process immunizes the devices from single event latch-up. The Space and Defense markets benefit from the robust radiation testing conducted by Intersil eliminating the need for additional upscreening and radiation testing.
The devices operate from a single 12V to 18V power supply with low power consumption, 40 milliwatts (mW) typical. With a maximum 75 nanosecond (ns) rise and fall time with a 4300 power factor (pF) load, the HS-442XRH/BRH devices exceed the requirements for most standard Rad Hard MOSFETs deployed in the space industry and allow for quick control of high gate capacitance power MOSFETs.
Peak output currents are greater than two amps (A) typical. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. Both the HS-4423RH and HS-4424RH feature a low voltage lockout at less than 10V, while the HS-4423BRH and HS-4424BRH feature low voltage lockout at less than 7.5V. The low voltage lockout circuit is incorporated in the output stage and puts outputs into a three-state mode when voltage drops below these levels.
Pricing and Availability
The HS-442XRH/BRH devices are immediately available in a 16-lead flatpack package and are manufactured to DSCC SMD 5962F99511. For more information, visit Intersils Web site or contact Intersil at 1-888-INTERSIL.
About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, wireless communications and power technologies to develop advanced integrated circuits and power semiconductors for high-growth segments of the communications, power and space/defense markets. Intersil Corporation employs 5,800 worldwide and utilizes the rich intellectual property of more than 1,400 patents. The company's web site is located at www.intersil.com.
This press release contains forward-looking statements made in reliance upon the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements reflect management's current assumptions and estimates of future performance and economic conditions. Specific risks include worldwide demand and product pricing for integrated circuits, and reductions in the U.S. and worldwide defense and space budgets. In addition, Intersil cautions investors that any forward-looking statements are subject to risks and uncertainties that may cause actual results and future trends and events to differ materially from those matters expressed in or implied by such forward-looking statements.
