News & Events
Intersil’s 100-Volt N-Channel UltraFET™ Delivers Power Efficiency for Industrial, Communications and Consumer Applications

— New 100V UltraFET Features Low On-Resistance, Low Gate Charge and Fast Reverse Recovery Time
— UltraFET Technology Offers Superior Performance at Breakdown Voltages From 50V to 200V

PALM BAY, FL, October 1, 1999 — Intersil Corporation today added to its portfolio of advanced power MOSFETs for industrial, communications and consumer markets, unveiling its new series of 100-volt N-channel power MOSFETs utilizing Intersil’s patented UltraFET technology. The company’s latest UltraFET MOSFET features low rDS (ON), low gate charge and fast reverse recovery time, and is ideally suited for applications where power management and efficiency are critical.

Intersil’s series of 100V UltraFET MOSFETs is optimally utilized in uninterruptable power supplies (UPS), DC-to-DC converters, load switching applications, motor controls and high-powered AC-to-DC power supplies requiring optimal trade off between rDS(ON), gate charge and switching speed. UltraFET design technology enables Intersil to provide customers with low rDS(ON) in reduced package size, saving board area and reducing weight. Improvement gains will also be recognized in circuit operating efficiency. The new 100V UltraFET Power MOSFET dissipates less power, allowing each part to run cooler, lowering the entire system temperature and yielding higher system reliability.

The HUF75645 & HUF75652 are the 100V series flagship products. At 100V, 75A and max rDS(ON) of 14 milliohm and 8 milliohm respectively, these devices have the lowest on resistance per unit area of silicon. Intersil’s entire series of 100V devices features low gate charge, resulting in faster switching speeds that are ideal for use in applications such as switch mode power supplies and DC-to-DC converters, where faster switching speed MOSFETs and low switching losses are required.

About UltraFET
Intersil’s advanced UltraFET process technology achieves the lowest possible on-resistance per silicon area, lower gate charge, improved dynamic switching characteristics, and other capabilities resulting in unparalleled device performance. UltraFET devices withstand high peak currents and energy in the avalanche mode, essential when switching inductive loads. The process enables devices between 60V and 200V to achieve the highest levels of performance on the market today.

Intersil remains committed to investments in new technology, product development, and software with an emphasis on providing customer solutions. Intersil will continue to release UltraFET products designed to increase customers’ system efficiency requirements. In the coming months, Intersil will release 150V and 200V UltraFETs and a next generation of products featuring breakdown voltages of 30V or less.

All Intersil UltraFET devices are fully compliant with the latest AEC Q101 specification, including the recently added preconditioning with forced moisture penetration. Intersil’s Power Discrete facilities are also QS9000 certified.

Pricing and Availability
Intersil’s 100V devices are immediately available in production quantities in a variety of packages. Intersil offers simulation models including temperature compensated PSPICETM and SABER electrical models.

Part number, package and pricing information is as follows:

Part Number Electrical Package Pricing/1000 pieces

HUF75652G3 100V/75A/8.0 milliohm TO-247 $7.67
HUF75645P3 100V/75A/14 milliohm TO220 $3.01
HUF75645S3S 100V/75A/14 milliohm TO263 $3.03

HUF75639P3 100V/54A/25 milliohm TO220 $1.52
HUF75639S3S 100V/54A/25 milliohm TO263 $1.65
HUF75639G3 100V/54A/25 milliohm TO247 $2.11

HUF75637P3 100V/41A/30 milliohm TO220 $1.45
HUF75637S3S 100V/41A/30 milliohm TO263 $1.58

HUF75631P3 100V/32A/40 milliohm TO220 $1.40
HUF75631SK8 100V/5.5A/39 milliohm SO-8 $1.35

About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, power and radiation-hardening technologies to develop advanced integrated circuits and discrete semiconductors for high-growth segments of the communications, power and space/defense markets. Intersil Corporation employs 5,800 worldwide and utilizes the rich intellectual property heritage from Harris, GE Solid State and RCA. The company’s Web site is located at http://www.intersil.com.

UltraFET is a registered trademark of Intersil Corporation.

This press release contains forward-looking statements made in reliance upon the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements reflect management's current assumptions and estimates of future performance and economic conditions. Specific risks include worldwide demand and product pricing for integrated circuits, and reductions in the U.S. and worldwide defense and space budgets. In addition, Intersil cautions investors that any forward-looking statements are subject to risks and uncertainties that may cause actual results and future trends and events to differ materially from those matters expressed in or implied by such forward-looking statements.