News & Events
Intersil Introduces Star*Power MOSFET Technology, a New Generation of Radiation Hardened MOSFETs

— Star*Power offerings to include PowerFETs, management ICs, and RadHard DC/DC converters
- Enables higher operating frequencies and improved body diode characteristics

PALM BAY, FL, February 28, 2000 – Intersil Corporation today announced the latest addition to its family of Star*Power technology products – Star*Power MOSFETs. The Star*Power family is exclusively designed for power management applications in commercial satellites. Representing the next generation of Radiation Hardened (RadHard) Power MOSFETs, Star*Power MOSFETs expand the electrical and radiation effect performance of power switching devices in harsh radiation environments. The initial Star*Power MOSFET offering delivers the lowest on resistance available, industry leading performance in gate charge, input capacitance, AC timing and Single Event Effects (SEE) pr0otection.

The Star*Power family now includes power management and MOSFET driver ICs as well as Power MOSFETs. The MOSFET offering delivers six voltage ranges from 30v to 250v spanning most of the application needs for power management in satellite applications. Star*Power also offers significant improvements in gate charge and AC timing, facilitating switching regulators and higher operating frequencies. The family allows satellite manufacturers to minimize part count, utilize the advantages of distributed power design techniques and ensure the survivability of satellites in harsh radiation environments. Star*Power components exhibit rugged total dose radiation performance and single event effects immunity and are best employed when failure is not an option in spacecraft power systems.

Star*Power MOSFETs include two product series, Star*Power MOSFET and Star*Power Gold MOSFET. Star*Power MOSFETs are optimized for rds(on) and total dose radiation performance and are rated for a total dose capability of up to 300,000 rads. Star*Power Gold MOSFETs are optimized for gate charge, are guaranteed to 100,000 rads and include Single Event Effects (SEE) capability. Single Event Gate Rupture (SEGR) protection is improved as is Single Event Burn Out (SEB) with a Linear Energy Transfer (LET) rating of 82.

Availability
Star*Power MOSFETs and Star*Power Gold MSOFETs will be available in the second quarter of 2000. Initial engineering samples are currently available. Surface mount and through hole packages will be offered. Intersil will offer multiple current and rds(on) ratings available for each voltage requirement, resulting in an unmatched selection of voltages, packages and currents. Further information on Star*Power can be obtained by logging onto Intersil’s Web site at www.intersil.com.

About Intersil Corporation
Intersil Corporation uses semiconductor expertise to enable highly integrated voice, data and video communications. Intersil's integrated communications portfolio includes PRISM® Wireless Local Area Network (WLAN) chip sets that enable mobile connectivity products for the home and office; analog, mixed-signal and digital integrated circuits for broadband access to wireless and wired Wide Area Networks (WANs); and power management products that enable 24x7 reliability in network servers, next generation PCs and information appliances. For more information about Intersil, visit the company's Internet homepage at www.intersil.com.