News & Events
Intersil Introduces Next Generation of Network Power Supply Management

— Intersil power management device targets topology popular in telecommunications power supplies

IRVINE, Calif., September 15, 2000 — Intersil (NASDAQ: ISIL), a leader in power management solutions for desktop PCs and file servers, today introduced its latest family of switch mode power supply (SMPS) series IGBTs to address the 24x7 power supply demands of telecommunication network infrastructures. The SMPS II IGBTs are designed to increase power efficiency in the Phase-shifted Bridge Topology, dominant power supply architecture in the telecom industry.

"The SMPS II family demonstrates Intersil’s continued development of high efficiency power devices for integrated communications networks," said Alex Craig, product line manager at Intersil. "We developed a truly unique family of products that offer telecom network designers the ability to enable high speed switching with minimal power loss. SMPS II is the latest innovation from Intersil that is driving the power supply industry. The company is committed to enabling more reliable and available communications networks."

Insulated gate bipolar transistors (IGBTs) conduct high electrical currents with low losses and are capable of blocking high voltages in delivering power in various topologies. SMPS IGBTs increase efficiency by eliminating switching losses associated with slow turn-off times, enabling the devices to be implemented in higher speed (100 kHz and greater) switching applications. In addition to deployment in telecom Phase-shifted Topology applications, SMPS II IGBTs are capable of high speed switching in uninterruptible power supply (UPS) and soft switched applications.

SMPS II IGBTs lower the gate charge parameter by 60 percent, translating into reduced delay time and less stress on gate drive circuits. Less delay also enables the SMPS II IGBTs to reduce the amount of energy lost. The device is capable of operating at five times the current density of a standard high voltage metal oxide semiconductor field effect transistor (MOSFET), the alternative power device in high speed switching. Increased current density allows the network designer to utilize a smaller and less expensive piece of silicon.

A co-packed diode, dubbed the ‘Stealth™ Diode,’ is included in the SMPS II IGBT offering. It is designed for use in high power, high frequency power supply applications and combines high speed and soft recovery characteristics for low electromagnetic interference (EMI). The Stealth Diode improves telecom switches and servers that comprise the Internet’s infrastructure by reducing turn-on power losses.

Pricing, Packaging and Availability
The SMPS II series IGBTs are currently available in several package options. The Stealth Diode is incorporated into several device offerings. Pricing for 1,000 piece quantities are as follows:

About Intersil Corporation
Intersil Corporation uses semiconductor expertise to enable highly integrated voice, data and video communications. Intersil's integrated communications portfolio includes PRISM^® Wireless Local Area Network (WLAN) chip sets that enable mobile connectivity products for the home and office; analog, mixed-signal and digital integrated circuits for broadband access to wireless and wired Wide Area Networks (WANs); and power management products that enable 24x7 reliability in network servers, next generation PCs and information appliances. For more information about Intersil, visit the company's Internet homepage at www.intersil.com.

This press release contains information relating to forecasted results of Intersil, including certain projections and business trends, that are forward-looking statements as defined in the Private Securities Litigation Reform Act of 1995. Actual results may differ materially from these forward-looking statements as a result of certain risks and uncertainties. These risks and uncertainties include, but are not limited to global and market conditions as well as other risks and uncertainties detailed from time to time in Intersil's filings with the Securities Exchange Commission. These forward-looking statements are made only as of the date of this press release and Intersil undertakes no obligation to update or revise the forward-looking statements, whether as a result of new information, future events, or otherwise.

PRISM is a registered trademark of Intersil Corporation.
Stealth Diode is a trademark of Intersil Corporation.

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