News & Events
Intersil Introduces Industry’s First Radiation Hardened Half-Bridge MOSFET Driver
Low-side and high-side gate drivers are independently controlled
- Provides on-chip error detection
PALM BAY, FL, November 17, 1999 -- Intersil Corporation announced today its radiation hardened (Rad Hard), high frequency, 100 volt (V), half-bridge, N-channel MOSFET driver integrated circuit (IC). An industry first, the device is a functional, pin-to-pin replacement for the industry standard 2110 types. The 2100RH is the latest addition to Intersil’s Star*Power family of Rad Hard power semiconductors designed for space power systems applications. The device has been designed to provide highly reliable performance in harsh radiation environments.
PALM BAY, FL, November 17, 1999 -- Intersil Corporation announced today its radiation hardened (Rad Hard), high frequency, 100 volt (V), half-bridge, N-channel MOSFET driver integrated circuit (IC). An industry first, the device is a functional, pin-to-pin replacement for the industry standard 2110 types. The 2100RH is the latest addition to Intersils Star*Power family of Rad Hard power semiconductors designed for space power systems applications. The device has been designed to provide highly reliable performance in harsh radiation environments.
Intersils HS-2100RH delivers independently controlled low-side and high-side gate drivers, resulting in maximum flexibility in dead time selection and driver protocol. A latch controls high-side output that is capable of 100V above bias supply. Pulses from the low-side logic circuit control the latch. These functions perform level shifting for the high-side output driver, ensuring the correct high side gate voltage. Level shifting input enables control of the device with 5V logic level inputs while operating negative supply voltage (Vdd) at 12-20V levels.
Designers have the option of improving low-side Power MOSFET noise immunity by offsetting low-side driver return (COM) when driving the MOSFET load. With the HS-2100RH, designers can offset COM to plus or minus five volts from the Vss supply voltage while ensuring that Vdd and positive supply voltages (Vcc) remain within 12V to 20V of COM.
The device has been designed with on-chip error detection and correction (EDC) circuitry for the high-side latch. Transparent to external functions, EDC monitors the high-side latch comparing it to the HIN input. Should the latch see a single event upset, the EDC corrects it within 250 nanoseconds (ns). This HS-2100RH feature prevents single event upset (SEU) failures when failure is not an option. Both VB and Vdd have undervoltage lock out (UVLO) features that force high-side output (HO) low if VB drops below 11.5V and forces both low-side output (LO) and HO low if Vdd drops below 11.5V. The device returns the LO and HO to the state of the input logic when the supply returns to 11.5V or greater.
This device will drive all Intersil radiation hardened FS series MOSFETS.
About Star*Power
The Star*Power product family includes Rad Hard MOSFETs, Rad Hard power management ICs and a developing Rad Hard DC to DC converter portfolio. Intersils Star*Power family currently includes MOSFET drivers, bridge drivers, comparators, regulators and references, and the family will soon include Intersils GEN III Rad Hard MOSFET devices. Intersils Star*Power products allow satellite manufacturers to minimize part count, utilize the advantages of distributed power design techniques and ensure the survivability of satellites in harsh radiation environments. Star*Power components exhibit rugged total dose radiation performance and single event effects immunity and are best employed when failure is not an option in spacecraft power systems. Star*Power information can be obtained by logging onto Intersils Web site at www.intersil.com, and accessing brochures BR118 and BR126.1.
Pricing and Availability
The HS-2100RH is immediately available in a 16-lead flatpack package and is manufactured to DSCC SMD 5962F99511. For more information, visit Intersils Web site at www.intersil.com or contact Intersil at 1-888-INTERSIL.
About Intersil Corporation
Intersil Corporation uses analog, mixed-signal, wireless communications and power technologies to develop advanced integrated circuits and power semiconductors for high-growth segments of the communications, power and space/defense markets. Intersil Corporation employs 5,800 worldwide and utilizes the rich intellectual property of more than 1,400 patents. The company's web site is located at www.intersil.com.
This press release contains forward-looking statements made in reliance upon the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements reflect management's current assumptions and estimates of future performance and economic conditions. Specific risks include worldwide demand and product pricing for integrated circuits, and reductions in the U.S. and worldwide defense and space budgets. In addition, Intersil cautions investors that any forward-looking statements are subject to risks and uncertainties that may cause actual results and future trends and events to differ materially from those matters expressed in or implied by such forward-looking statements.
