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MSL = Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD = Standard Microcircuit Drawing
Description
The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated
using self-aligned silicon gate technology. The device
utilizes synchronous circuitry to achieve high performance
and low power operation.
On chip latches are provided for addresses allowing efficient
interfacing with microprocessor systems. The data output
can be forced to a high impedance state for use in expanded
memory arrays.
Gated inputs allow lower operating current and also eliminates
the need for pull up or pull down resistors. The HM-6514/883 is
fully static RAM and may be maintained in any state for an
indefinite period of time.
Data retention supply voltage and supply current are guaranteed
over temperature.
Key Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Power Standby 125µW Max
Low Power Operation 35mW/MHz Max
Data Retention at 2.0V Min
TTL Compatible Input/Output
Common Data Input/Output
Three-State Output
Standard JEDEC Pinout
Fast Access Time 120/200ns Max
18 Pin Package for High Density
Gated Inputs - No Pull Up or Pull Down Resistors
Required
Application Note(s):
Datasheet(s):
Technical Homepage:
